WebIn contrast with dielectric materials, metal CMP is governed by the electrochemical behavior of metal films in the presence of oxidizer, complexing agents, and corrosion inhibitors. Metal CMP slurries may contain additional chemical reagents like oxidizer, complexing agent, and corrosion inhibitor. http://cden.ucsd.edu/internal/Publications/workshop_archive/2005_Sep/posters/CMP_Wang_Doyle.pdf
Study on Galvanic Corrosion in Copper CMP - University of …
WebSep 30, 2015 · Abstract: Tungsten CMP process involves an electrochemical alteration of metal surface and mechanical removal of the modified film. Electrochemical alteration … Webinterconnect process. Slurry chemical corrosion was found to be enhanced when the slurry was diluted by deionized (DI) water during rinsing just after CMP. Since the corrosion inhibitor, benzotriazole (BTA), reduces the Cu removal rate, adding it to the rinse solution prevents chemical corrosion more effectively than adding it to the slurry. chelmsford nationwide branch
Galvanic corrosion inhibition from aspect of bonding orbital theory in C…
http://cden.ucsd.edu/internal/Publications/workshop_archive/2005_Sep/posters/CMP_Wang_Doyle.pdf Web10.1016/B978-0-08-100165-3.00002-4 Krishnan M. Copper chemical mechanical planarization (CuCMP) challenges in 22 nm back-end-of-line (BEOL) and beyond. in Advances in Chemical Mechanical Planarization (CMP), 27 (Woodhead Publishing, 2016). ... Devon A.. Role of 1,2,4-Triazole as a Passivating Agent for Cobalt during Post … WebMar 23, 2024 · The CMP mechanism used in citric-acid-based slurry and the H 2 O 2 as oxidizer were presented in ref. [ 9 ]. Their results show that the copper anodic reaction is provoked by the increase in corrosion potential and, hence, the passivation layer of copper oxide is increased and the copper dissolution is reduced. fletchers bakery